The Effect of Optical Phonon Scattering on the On-Current and Gate Delay Time of CNT-FETs
نویسنده
چکیده
The performance of carbon nanotube field-effect transistors is analyzed, using the nonequilibrium Green’s function formalism. The role of the inelastic electron-phonon interaction on the both on-current and gate delay time of these devices is studied. For the calculation of the gate delay time the quasi-static approximation is assumed. The results confirm experimental data of carbon nanotube transistors, where the on-current can be close to the ballistic limit, but the gate delay time can be far below that limit.
منابع مشابه
The Effect of Inelastic Phonon Scattering on Carbon Nanotube-Based Transistor Performance
Carbon nanotube (CNT) based transistors have been studied in recent years as potential alternatives to CMOS devices because of their capability of near ballistic transport. In this work the non-equilibrium Green’s function (NEGF) formalism is used to perform a comprehensive study of CNT based transistors. The effect of inelastic phonon scattering on the gate-delay time of CNT based transistors ...
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